|GROWTH METHOD||Metallurgical graphene growth on liquid metal|
|STANDARD SUBSTRATES||PMMA, Si/SiO2, quartz|
|TRANSFER AVAILABILITY||Transfer on custom substrates available upon request|
|QUALITY CONTROL||Raman spectroscopy
|SINGLE GRAIN SIZE||Up to 1 mm|
|THICKNESS (THEORETICAL)||0.345 nm|
|AVERAGE SHEET RESISTANCE*||<250 Ω/cm2
(measured with van der Pauw method)
*values confirmed by EIT+ Wroclaw Research Centre independent product evaluation study
SCANNING ELECTRON MICROSCOPY
(graphene single grain in the nucleation process)
Si/SiO2 silicon wafers
Resistance: 0.001-0.01 Ohm-cm
Thickness of the oxide layer: 290nm ±5%
HSMG® and AGP’s laboratories have been awarded Nano SoP certification by Tüv-Süd. Graphene evaluation was conducted independently by EIT+ Wroclaw Research Centre.
AGP has patented the method of producing and processing graphene from liquid metal matrix in Poland (PL 224409 B1 and PL 224447 B1), the United States (US 9,284,640 B2) and the European Union (EP 2865646 A1).
For available products, the shipment will take place within 1-2 business days after the payment is received or proof of the payment is presented. If the product is currently not in stock, the order may be shipped within 30 calendar days.
You will be informed of the exact lead time at the time of the confirmation of the order.